Toshiba N-Channel MOSFET, 10 μA, 250 V Enhancement, 3-Pin TO-252 TK8P25DA,RQ(S
- RS庫存編號:
- 174-4116
- 製造零件編號:
- TK8P25DA,RQ(S
- 製造商:
- Toshiba
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可享批量折扣
查看批量定價選項小計（1 包，共 25 件）*
HK$75.70
訂單超過 HK$250.00 免費送貨
有庫存
- 25 件準備從其他地點送貨
- 加上 575 件從 2026年9月14日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | HK$3.028 | HK$75.70 |
| 50 - 100 | HK$2.952 | HK$73.80 |
| 125 - 225 | HK$2.88 | HK$72.00 |
| 250 - 600 | HK$2.808 | HK$70.20 |
| 625 + | HK$2.736 | HK$68.40 |
* 參考價格
- RS庫存編號:
- 174-4116
- 製造零件編號:
- TK8P25DA,RQ(S
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10μA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 55W | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Forward Voltage Vf | -1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1mm | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Height | 2.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10μA | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 55W | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Forward Voltage Vf -1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 6.1mm | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Height 2.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Toshiba MOSFET is silicon N-channel MOS with 3 pin and surface mounting type.
Low drain-source on-resistance
Low leakage current
相关链接
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