N-Channel MOSFET, 170 A, 650 V, 4-Pin SOT-227 IXYS IXFN170N65X2
- RS庫存編號:
- 146-4241
- 製造零件編號:
- IXFN170N65X2
- 製造商:
- IXYS
可享批量折扣
Price 毎管:10 个**
HK$478.92
4 現貨庫存,可於3工作日發貨。*
* 交貨日期可能會根據您選擇的數量和交貨地址而變更。
訂單金額滿 HK$850.00 即可享受 免費 送貨服務
單位 | 每單位 | Per Tube** |
---|---|---|
10 - 10 | HK$478.92 | HK$4,789.20 |
20 - 30 | HK$469.34 | HK$4,693.40 |
40 + | HK$459.95 | HK$4,599.50 |
** 參考價格
- RS庫存編號:
- 146-4241
- 製造零件編號:
- IXFN170N65X2
- 製造商:
- IXYS
IXYS Corporation (NASDAQ: IXYS), a global manufacturer of power semiconductors and integrated circuits (ICs) for energy efficiency, power management, transportation, medical, and motor control applications, announces an expansion of its Ultra Junction Power MOSFET product line: 650V X2-Class Power MOSFETs with fast body diodes. With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these devices are optimized for soft-switching resonant-mode power conversion applications.The intrinsic fast body diodes HiPerFETs™ of the MOSFETs display very soft recovery characteristics, minimizing electromagnetic interference (EMI), especially in half or full-bridge switching topologies. With low reverse recovery charge and time, the body diodes can be utilized to make sure that all the energies are removed during high-speed switching to avoid device failure and achieve high efficiency. Like other Ultra Junction MOSFETs from IXYS, these new devices have been developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced on-resistance and gate charge. They also exhibit a superior dv/dt performance and are avalanche rated as well. Thanks to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.Suitable applications include resonant-mode power supplies, high intensity discharge (HID) lamp ballast, AC and DC motor drives, DC-DC converters, robotic and servo control, battery chargers, 3-level solar inverters, and LED lighting.These new 650V X2 Power MOSFETs with HiPerFET™ body diodes are available in the following international standard size packages: TO-220, TO-263, SOT-227, TO-247, PLUS247, TO-264, and PLUS264. Some example part numbers include IXFA22N65X2, IXFH46N65X2, IXFK120N65X2, and IXFN150N65X2, with drain current ratings of 22A, 34A, 120A, and 145A, respectively.
Low RDS(ON) and Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Resonant mode power supplies
High intensity discharge (HID) lamp ballast
AC and DC motor drives
DC-DC converters
Robotic and servo control
Battery chargers
3-level solar inverters
LED lighting
Unmanned Aerial Vehicles (UAVs)
Higher efficiency
High power density
Easy to mount
Space savings
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Resonant mode power supplies
High intensity discharge (HID) lamp ballast
AC and DC motor drives
DC-DC converters
Robotic and servo control
Battery chargers
3-level solar inverters
LED lighting
Unmanned Aerial Vehicles (UAVs)
Higher efficiency
High power density
Easy to mount
Space savings
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 170 A |
Maximum Drain Source Voltage | 650 V |
Package Type | SOT-227 |
Series | HiperFET |
Mounting Type | Screw Mount |
Pin Count | 4 |
Maximum Drain Source Resistance | 13 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5V |
Minimum Gate Threshold Voltage | 3.5V |
Maximum Power Dissipation | 1.17 kW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | ±30 V |
Maximum Operating Temperature | +150 °C |
Length | 38.23mm |
Width | 25.07mm |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 434 @ 10 V nC |
Height | 9.6mm |
Minimum Operating Temperature | -55 °C |
Forward Diode Voltage | 1.4V |