Vishay TrenchFET N-Channel Power MOSFET, 2.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2302DDS-T1-GE3
- RS庫存編號:
- 152-6358
- 製造零件編號:
- SI2302DDS-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
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查看批量定價選項小計（1 包，共 25 件）*
HK$79.10
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 725 | HK$3.164 | HK$79.10 |
| 750 + | HK$3.108 | HK$77.70 |
* 參考價格
- RS庫存編號:
- 152-6358
- 製造零件編號:
- SI2302DDS-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.075Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.71W | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Width | 1.4mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.075Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.71W | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Length 3.04mm | ||
Width 1.4mm | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
Halogen-free
TrenchFET® Power MOSFET
100 % Rg Tested
APPLICATIONS
Load Switching for Portable Devices
DC/DC Converter
相关链接
- Vishay TrenchFET N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 SI2318HDS-T1-GE3
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