IXYS Linear L2 Type N-Channel MOSFET, 178 A, 100 V Enhancement, 4-Pin SOT-227
- RS庫存編號:
- 168-4584
- 製造零件編號:
- IXTN200N10L2
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 10 件）*
HK$4,205.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年12月07日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 10 - 40 | HK$420.50 | HK$4,205.00 |
| 50 + | HK$412.08 | HK$4,120.80 |
* 參考價格
- RS庫存編號:
- 168-4584
- 製造零件編號:
- IXTN200N10L2
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 178A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-227 | |
| Series | Linear L2 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 540nC | |
| Maximum Power Dissipation Pd | 830W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.6mm | |
| Length | 38.23mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 178A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-227 | ||
Series Linear L2 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 540nC | ||
Maximum Power Dissipation Pd 830W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Height 9.6mm | ||
Length 38.23mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
相关链接
- IXYS Linear L2 Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-227 IXTN200N10L2
- IXYS Linear Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227
- IXYS Linear Type N-Channel MOSFET 500 V Enhancement, 4-Pin SOT-227
- IXYS Linear Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227 IXTN22N100L
- IXYS Linear Type N-Channel MOSFET 500 V Enhancement, 4-Pin SOT-227 IXTN46N50L
- IXYS HiperFET Type N-Channel MOSFET 650 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227