IXYS Linear Type N-Channel MOSFET, 22 A, 1 kV Enhancement, 4-Pin SOT-227 IXTN22N100L
- RS庫存編號:
- 168-4610
- 製造零件編號:
- IXTN22N100L
- 製造商:
- IXYS
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可享批量折扣
查看批量定價選項小計（1 管，共 10 件）*
HK$5,191.50
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 210 件從 2026年9月07日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 10 - 10 | HK$519.15 | HK$5,191.50 |
| 20 - 30 | HK$508.77 | HK$5,087.70 |
| 40 + | HK$498.59 | HK$4,985.90 |
* 參考價格
- RS庫存編號:
- 168-4610
- 製造零件編號:
- IXTN22N100L
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Series | Linear | |
| Package Type | SOT-227 | |
| Mount Type | Panel | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 270nC | |
| Maximum Power Dissipation Pd | 700W | |
| Maximum Operating Temperature | 150°C | |
| Length | 38.2mm | |
| Height | 9.6mm | |
| Standards/Approvals | No | |
| Width | 25.07mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Series Linear | ||
Package Type SOT-227 | ||
Mount Type Panel | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 270nC | ||
Maximum Power Dissipation Pd 700W | ||
Maximum Operating Temperature 150°C | ||
Length 38.2mm | ||
Height 9.6mm | ||
Standards/Approvals No | ||
Width 25.07mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-Channel Power MOSFET, IXYS Linear Series
N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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