ROHM R6024ENJ N-Channel MOSFET, 24 A, 600 V Enhancement, 3-Pin TO-263 R6024ENJTL

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小計（1 卷，共 1000 件）*

HK$18,500.00

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1000 - 1000HK$18.50HK$18,500.00
2000 - 2000HK$18.13HK$18,130.00
3000 +HK$17.768HK$17,768.00

* 參考價格

RS庫存編號:
172-0366
製造零件編號:
R6024ENJTL
製造商:
ROHM
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品牌

ROHM

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

R6024ENJ

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

320mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

245W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

70nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

9.2mm

Length

10.4mm

Height

4.7mm

Automotive Standard

No

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on-resistance.

Fast switching speed.

Gate-source voltage (VGSS) guaranteed to be ±20V.

Drive circuits can be simple.

Parallel use is easy.

Pb-free lead plating

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