ROHM R6024ENJ N-Channel MOSFET, 24 A, 600 V Enhancement, 3-Pin TO-263 R6024ENJTL

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小計(1 包,共 5 件)*

HK$198.70

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  • 2027年3月04日 發貨
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5 - 120HK$39.74HK$198.70
125 - 245HK$39.02HK$195.10
250 - 495HK$38.30HK$191.50
500 - 745HK$37.62HK$188.10
750 +HK$36.96HK$184.80

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RS庫存編號:
172-0479
製造零件編號:
R6024ENJTL
製造商:
ROHM
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品牌

ROHM

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

600V

Series

R6024ENJ

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

320mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

70nC

Maximum Power Dissipation Pd

245W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Width

9.2mm

Standards/Approvals

No

Height

4.7mm

Length

10.4mm

Automotive Standard

No

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on-resistance.

Fast switching speed.

Gate-source voltage (VGSS) guaranteed to be ±20V.

Drive circuits can be simple.

Parallel use is easy.

Pb-free lead plating

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