Infineon OptiMOS 5 N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin TO-252 IPD053N06NATMA1

RS庫存編號:: 178-7370
製造零件編號:: IPD053N06NATMA1
製造商:: Infineon

Infineon OptiMOS 5 N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin TO-252 IPD053N06NATMA1

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HK$15,237.50

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2500 - 10000	HK$6.095	HK$15,237.50
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RS庫存編號:: 178-7370
製造零件編號:: IPD053N06NATMA1
製造商:: Infineon

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	45A
	Maximum Drain Source Voltage Vds	60V
	Series	OptiMOS 5
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	8mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	83W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Typical Gate Charge Qg @ Vgs	27nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	6.22mm
	Length	6.73mm
	Height	2.41mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 45A
	Maximum Drain Source Voltage Vds 60V
	Series OptiMOS 5
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 8mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 83W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs -20V, +20V
	Typical Gate Charge Qg @ Vgs 27nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 6.22mm
	Length 6.73mm
	Height 2.41mm
	Automotive Standard No

IPD053N06N OptiMOS Power-Transistor

Infineon OptiMOS 5 Series MOSFET, 60V Maximum Drain Source Voltage, 45A Maximum Continuous Drain Current - IPD053N06NATMA1

This MOSFET is an N‑channel enhancement device designed for high‑current switching in surface‑mounted power assemblies. It operates across a wide ambient range for demanding thermal environments and is intended for applications where low conduction losses and rapid switching are required. The device supports standard drive voltages and provides a controlled forward conduction characteristic suitable for modern power conversion and motor‑drive topologies.

Features and Benefits:

• 8mΩ Rds(on) reduces conduction losses and improves efficiency
• 45A continuous drain current supports high‑current designs
• 27nC typical gate charge enables faster switching transitions
• 83W maximum power dissipation allows high‑power operation
• 20V gate tolerance accommodates common gate‑drive schemes

Applications

• Suitable for synchronous buck converters in power supplies
• Ideal for three‑phase motor inverter half‑bridges
• Used with battery management systems in high‑current paths
• Can be used for DC‑DC conversion in telecoms equipment
• Appropriate for load‑switching in industrial automation units

What gate‑drive considerations affect switching performance?

Driving the gate towards the 20V limit reduces on‑resistance but increases switching losses

selecting a driver that balances voltage and slew rate optimises efficiency and electromagnetic behaviour.

How should thermal conditions be managed for continuous operation?

With an 83W dissipation rating, heatsinking and PCB copper area must be sized to maintain junction temperatures within the device’s -55°C to 175°C operational range for reliable long‑term operation.

What mechanical constraints affect PCB layout for this device?

The TO‑252 surface‑mount package requires attention to pad geometry and thermal vias to transfer heat from the solderable package base into the board’s thermal planes.

How does forward voltage influence conduction calculations?

A typical forward voltage of 1.2V should be included when calculating voltage drop and power loss in conduction intervals, particularly under high‑current conditions.