Infineon OptiMOS 5 N-Channel MOSFET, 45 A, 60 V Enhancement, 3-Pin TO-252 IPD053N06NATMA1
- RS庫存編號:
- 906-4491
- 製造零件編號:
- IPD053N06NATMA1
- 製造商:
- Infineon
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HK$108.60
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 620 | HK$10.86 | HK$108.60 |
| 630 - 1240 | HK$10.60 | HK$106.00 |
| 1250 + | HK$10.42 | HK$104.20 |
* 參考價格
- RS庫存編號:
- 906-4491
- 製造零件編號:
- IPD053N06NATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS 5 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS 5 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Height 2.41mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
豁免
Infineon OptiMOS 5 Series MOSFET, 60V Maximum Drain Source Voltage, 45A Maximum Continuous Drain Current - IPD053N06NATMA1
This MOSFET is an N‑channel enhancement device designed for high‑current switching in surface‑mounted power assemblies. It operates across a wide ambient range for demanding thermal environments and is intended for applications where low conduction losses and rapid switching are required. The device supports standard drive voltages and provides a controlled forward conduction characteristic suitable for modern power conversion and motor‑drive topologies.
Features and Benefits:
• 8mΩ Rds(on) reduces conduction losses and improves efficiency
• 45A continuous drain current supports high‑current designs
• 27nC typical gate charge enables faster switching transitions
• 83W maximum power dissipation allows high‑power operation
• 20V gate tolerance accommodates common gate‑drive schemes
• 45A continuous drain current supports high‑current designs
• 27nC typical gate charge enables faster switching transitions
• 83W maximum power dissipation allows high‑power operation
• 20V gate tolerance accommodates common gate‑drive schemes
Applications
• Suitable for synchronous buck converters in power supplies
• Ideal for three‑phase motor inverter half‑bridges
• Used with battery management systems in high‑current paths
• Can be used for DC‑DC conversion in telecoms equipment
• Appropriate for load‑switching in industrial automation units
• Ideal for three‑phase motor inverter half‑bridges
• Used with battery management systems in high‑current paths
• Can be used for DC‑DC conversion in telecoms equipment
• Appropriate for load‑switching in industrial automation units
What gate‑drive considerations affect switching performance?
Driving the gate towards the 20V limit reduces on‑resistance but increases switching losses
selecting a driver that balances voltage and slew rate optimises efficiency and electromagnetic behaviour.
How should thermal conditions be managed for continuous operation?
With an 83W dissipation rating, heatsinking and PCB copper area must be sized to maintain junction temperatures within the device’s -55°C to 175°C operational range for reliable long‑term operation.
What mechanical constraints affect PCB layout for this device?
The TO‑252 surface‑mount package requires attention to pad geometry and thermal vias to transfer heat from the solderable package base into the board’s thermal planes.
How does forward voltage influence conduction calculations?
A typical forward voltage of 1.2V should be included when calculating voltage drop and power loss in conduction intervals, particularly under high‑current conditions.
相关链接
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