Vishay Single E 1 Type N-Channel Power MOSFET, 26 A, 500 V, 3-Pin TO-220AB
- RS庫存編號:
- 180-7350
- 製造零件編號:
- SIHP25N50E-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
HK$843.90
訂單超過 HK$250.00 免費送貨
有庫存
- 250 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | HK$16.878 | HK$843.90 |
| 100 - 150 | HK$16.508 | HK$825.40 |
| 200 + | HK$16.144 | HK$807.20 |
* 參考價格
- RS庫存編號:
- 180-7350
- 製造零件編號:
- SIHP25N50E-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Series | E | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.145Ω | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 10.52 mm | |
| Height | 6.71mm | |
| Length | 14.4mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Series E | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.145Ω | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 10.52 mm | ||
Height 6.71mm | ||
Length 14.4mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay through-hole mount N-channel TO-220AB-3 MOSFET is a new age product with a drain-source voltage of 500V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 145mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 250W and continuous drain current of 26A. It has a driving voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Low figure-of-merit (FOM): Ron x Qg
• Low gate charge (Qg)
• Low input capacitance (Ciss)
• Operating temperature ranges between -55°C and 150°C
• Reduced switching and conduction losses
Applications
• Hard switched topologies
• PC silver box/ATX power supplies
• Power factor correction power supplies (PFC)
• Switch mode power supplies (SMPS)
• Two-stage LED lighting
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• UIS tested
相关链接
- Vishay Single E 1 Type N-Channel Power MOSFET 500 V, 3-Pin TO-220AB SIHP25N50E-GE3
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- Vishay Single EF 1 Type N-Channel Power MOSFET 600 V, 3-Pin TO-220AB
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- Vishay Single EF 1 Type N-Channel Power MOSFET 600 V, 3-Pin TO-220AB SIHP21N60EF-GE3
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- Vishay Single Type N-Channel Power MOSFET 200 V TO-220AB