Vishay SiR870BDP N-Channel MOSFET, 81 A, 100 V Enhancement, 8-Pin SO-8 SiR870BDP-T1-RE3

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小計(1 卷,共 3000 件)*

HK$37,323.00

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3000 - 3000HK$12.441HK$37,323.00
6000 - 9000HK$12.067HK$36,201.00
12000 +HK$11.705HK$35,115.00

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RS庫存編號:
204-7223
製造零件編號:
SiR870BDP-T1-RE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SiR870BDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

100W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

110nC

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Width

1.12mm

Height

6.25mm

Length

5.26mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET has a very low RDS x Qg figure-of-merit (FOM) and is tuned for the lowest RDS x Qoss FOM.

TrenchFET Gen IV power MOSFET

100 % Rg and UIS tested

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