Infineon 500V CoolMOS CE Type N-Channel MOSFET, 2.2 A, 500 V Enhancement, 3-Pin TO-252 IPD50R2K0CEAUMA1
- RS庫存編號:
- 214-4379
- 製造零件編號:
- IPD50R2K0CEAUMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 包，共 50 件）*
HK$192.90
訂單超過 HK$250.00 免費送貨
有庫存
- 2,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 600 | HK$3.858 | HK$192.90 |
| 650 - 1200 | HK$3.766 | HK$188.30 |
| 1250 + | HK$3.704 | HK$185.20 |
* 參考價格
- RS庫存編號:
- 214-4379
- 製造零件編號:
- IPD50R2K0CEAUMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | 500V CoolMOS CE | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.83V | |
| Maximum Power Dissipation Pd | 33W | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.35mm | |
| Length | 6.65mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series 500V CoolMOS CE | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.83V | ||
Maximum Power Dissipation Pd 33W | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.35mm | ||
Length 6.65mm | ||
Automotive Standard No | ||
This Infineon 500 V Cool MOS CE MOSFET is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards.
It provides very high commutation ruggedness
相关链接
- Infineon 500V CoolMOS CE Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-252
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