Infineon CoolMOS CE Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 3-Pin TO-252 IPD65R1K0CEAUMA1

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小計(1 包,共 25 件)*

HK$126.20

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25 - 600HK$5.048HK$126.20
625 - 1225HK$4.92HK$123.00
1250 +HK$4.844HK$121.10

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包裝方式:
RS庫存編號:
214-9045
製造零件編號:
IPD65R1K0CEAUMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7.2A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS CE

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

15.3nC

Forward Voltage Vf

0.9V

Maximum Power Dissipation Pd

68W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.73mm

Height

2.41mm

Automotive Standard

No

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching Super junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Easy to use/drive

Very high commutation ruggedness

Qualified for standard grade applications

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