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Infineon HEXFET N-Channel MOSFET, 86 A, 30 V Enhancement, 3-Pin TO-252

Name: Infineon HEXFET N-Channel MOSFET, 86 A, 30 V Enhancement, 3-Pin TO-252
Brand: Infineon
SKU: 217-2621
Availability: InStock

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小計（1 卷，共 2000 件）*

HK$6,836.00

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單位	每單位	每卷*
2000 - 8000	HK$3.418	HK$6,836.00
10000 +	HK$3.35	HK$6,700.00

* 參考價格

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	86A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	8.2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	17nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	79W
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	175°C
	Width	6.22mm
	Standards/Approvals	No
	Length	6.37mm
	Height	2.39mm
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 86A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 8.2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 17nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 79W
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 175°C
	Width 6.22mm
	Standards/Approvals No
	Length 6.37mm
	Height 2.39mm
	Automotive Standard No

The Infineon 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package.

Very Low RDS(on) at 4.5V VGS

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

and Current

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