Infineon HEXFET Type N-Channel MOSFET, 9.3 A, 250 V Enhancement, 3-Pin TO-252 AUIRFR4292TRL
- RS庫存編號:
- 222-4614
- 製造零件編號:
- AUIRFR4292TRL
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
HK$152.20
訂單超過 HK$250.00 免費送貨
有庫存
- 2,890 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | HK$15.22 | HK$152.20 |
| 20 - 90 | HK$14.84 | HK$148.40 |
| 100 - 240 | HK$14.47 | HK$144.70 |
| 250 - 490 | HK$14.11 | HK$141.10 |
| 500 + | HK$13.76 | HK$137.60 |
* 參考價格
- RS庫存編號:
- 222-4614
- 製造零件編號:
- AUIRFR4292TRL
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.3A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 345mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.22mm | |
| Height | 2.39mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.3A | ||
Maximum Drain Source Voltage Vds 250V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 345mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.22mm | ||
Height 2.39mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant
相关链接
- Infineon HEXFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SOIC IRF7493TRPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRF630NPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252