Infineon iPB Type P-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA2

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包裝方式:
RS庫存編號:
229-1819
製造零件編號:
IPB120P04P4L03ATMA2
製造商:
Infineon
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品牌

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

136W

Forward Voltage Vf

-1.3V

Maximum Gate Source Voltage Vgs

16V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

+175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

Infineon iPB Series MOSFET, 40V Maximum Drain Source Voltage, 120A Maximum Continuous Drain Current - IPB120P04P4L03ATMA2


This p-channel MOSFET is a surface-mount power transistor designed for high-current switching and thermal resilience in automotive and industrial environments. It operates across a wide temperature span and is intended for use where robust gate tolerance and low conduction loss are required.

Features and Benefits:


• 40V drain-source rating enables medium-voltage switching
• 120A continuous drain current supports heavy load handling
• 3.1mΩ low Rds(on) reduces conduction losses under load
• 136W power dissipation allows sustained power handling
• Vgs tolerance up to 16V permits higher gate drive margins
• -55°C to 175°C temperature range maintains operation in extremes

Applications


• Suitable for high-current reverse battery protection circuits
• Ideal for automotive power distribution modules
• Used with motor controller low-side or high-side
• Can be used for DC-DC converter synchronous switching
• Suitable for power-management functions in electric vehicles

What package does it use for PCB assembly?


It is supplied in a TO-263 surface-mount package designed for soldered board mounting.

How does it behave thermally under high load?


The device can dissipate up to 136W when properly cooled, allowing extended operation at elevated power with adequate thermal management.

What gate limits should be observed during design?


The gate-source voltage must not exceed 16V to avoid gate overstress.

Is it suitable for automotive qualification requirements?


It meets the AEC-Q101 automotive standard for semiconductor qualification.

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