Infineon Dual N Channel Normal Level IPG 2 N-Channel MOSFET, 20 A, 40 V Enhancement, 8-Pin SuperSO
- RS庫存編號:
- 229-1840
- 製造零件編號:
- IPG20N04S409ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 5000 件）*
HK$31,675.00
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 5000 | HK$6.335 | HK$31,675.00 |
| 10000 - 10000 | HK$6.091 | HK$30,455.00 |
| 15000 + | HK$6.014 | HK$30,070.00 |
* 參考價格
- RS庫存編號:
- 229-1840
- 製造零件編號:
- IPG20N04S409ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO | |
| Series | IPG | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 900mV | |
| Maximum Power Dissipation Pd | 54W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Transistor Configuration | Dual N Channel Normal Level | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.15mm | |
| Height | 1mm | |
| Width | 5.9mm | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO | ||
Series IPG | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 900mV | ||
Maximum Power Dissipation Pd 54W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Transistor Configuration Dual N Channel Normal Level | ||
Maximum Operating Temperature 175°C | ||
Length 5.15mm | ||
Height 1mm | ||
Width 5.9mm | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon dual n channel normal level MOSFET has same thermal and electrical performance as a DPAK with the same die size. It's exposed pad provides excellent thermal transfer. It is two n channel in one package with 2 isolated lead frames.
It is RoHS compliant and AEC Q101 qualified
It has 175°C operating temperature
相关链接
- Infineon Dual N Channel Normal Level IPG 2 N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO IPG20N04S409ATMA1
- Infineon Dual N IPG 2 N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO IPG20N04S412AATMA1
- Infineon Dual IPG 2 N-Channel Power Transistor 40 V Enhancement, 8-Pin SuperSO IPG20N04S4L11AATMA1
- Infineon Dual N Channel Normal Level Enhancement Mode IPG16N10S4-61 N-Channel MOSFET 100 V Dual N, 8-Pin SuperSO8
- Infineon Dual N Channel Normal Level IPG20N06S4-15A 2 N-Channel MOSFET 60 V Dual N, 8-Pin SuperSO8 5 x 6
- Infineon IPG Dual N-Channel MOSFET 40 V P TDSON IPG20N04S4L08ATMA1
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Dual N-Channel MOSFET 60 V Enhancement, 8-Pin
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 N-Channel MOSFET 100 V Dual N, 8-Pin TDSON