Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 N-Channel MOSFET, 20 A, 100 V Dual N, 8-Pin TDSON
- RS庫存編號:
- 258-3883
- 製造零件編號:
- IPG20N10S4L22AATMA1
- 製造商:
- Infineon
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HK$37.30
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單位 | 每單位 | 每包* | 節省 |
|---|---|---|---|
| 2 - 8 | HK$18.65 | HK$37.30 | - |
| 10 - 98 | HK$17.70 | HK$35.40 | HK$9.50 |
| 100 - 248 | HK$16.55 | HK$33.10 | HK$210.00 |
| 250 - 498 | HK$15.45 | HK$30.90 | HK$800.00 |
| 500 + | HK$14.20 | HK$28.40 | HK$2,225.00 |
* 參考價格
- RS庫存編號:
- 258-3883
- 製造零件編號:
- IPG20N10S4L22AATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOSTM-T2 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Dual N | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Power Dissipation Pd | 60W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual N Channel Logic Level Enhancement Mode | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOSTM-T2 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Dual N | ||
Maximum Gate Source Voltage Vgs 16V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Power Dissipation Pd 60W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual N Channel Logic Level Enhancement Mode | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-T2 power-transistor is Dual N-channel normal level enhancement mode. It has 175°C operating temperature.
AEC Q101 qualified
MSL1 up to 260°C peak reflow
相关链接
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 N-Channel MOSFET 100 V Dual N, 8-Pin TDSON
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