Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 2 Type N-Channel MOSFET, 20 A, 60 V N, 8-Pin SuperSO8
- RS庫存編號:
- 249-6919
- 製造零件編號:
- IPG20N06S4L26ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 5000 件）*
HK$22,385.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年7月24日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 5000 | HK$4.477 | HK$22,385.00 |
| 10000 - 10000 | HK$4.387 | HK$21,935.00 |
| 15000 + | HK$4.256 | HK$21,280.00 |
* 參考價格
- RS庫存編號:
- 249-6919
- 製造零件編號:
- IPG20N06S4L26ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | OptiMOSTM-T2 | |
| Pin Count | 8 | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 33W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Forward Voltage Vf | 1.3V | |
| Transistor Configuration | Dual N Channel Logic Level Enhancement Mode | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SuperSO8 5 x 6 | ||
Series OptiMOSTM-T2 | ||
Pin Count 8 | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 33W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Forward Voltage Vf 1.3V | ||
Transistor Configuration Dual N Channel Logic Level Enhancement Mode | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
175°C operating temperature
相关链接
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 2 Type N-Channel MOSFET 60 V N, 8-Pin SuperSO8
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Dual N-Channel MOSFET 60 V Enhancement, 8-Pin
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Type N-Channel MOSFET 100 V Dual N, 8-Pin TDSON
- Infineon Dual N Channel OptiMOSTM 2 Type N-Channel MOSFET & Diode 30 V, 8-Pin SuperSO8 5 x 6
- Infineon Dual N Channel OptiMOSTM 2 Type N-Channel MOSFET & Diode 30 V, 8-Pin SuperSO8 5 x 6 BSC0924NDIATMA1
- Infineon Dual N Channel Logic Level Enhancement Mode OptiMOS-T2 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin
- Infineon Dual N Channel Normal Level IPG20N06S4-15A 2 Type N-Channel MOSFET 60 V Dual N, 8-Pin SuperSO8 5 x 6
- Infineon Dual N Channel Logic Level Enhancement Mode IPG20N06S4L-11 Type N-Channel MOSFET 60 V TDSON