Infineon Dual N Channel Logic Level Enhancement Mode OptiMOSTM-T2 Type N-Channel MOSFET, 20 A, 100 V Dual N, 8-Pin TDSON

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RS庫存編號:
258-3882
製造零件編號:
IPG20N10S4L22AATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Package Type

TDSON

Series

OptiMOSTM-T2

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Dual N

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

60W

Typical Gate Charge Qg @ Vgs

21nC

Maximum Operating Temperature

175°C

Transistor Configuration

Dual N Channel Logic Level Enhancement Mode

Standards/Approvals

RoHS Compliant

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is Dual N-channel normal level enhancement mode. It has 175°C operating temperature.

AEC Q101 qualified

MSL1 up to 260°C peak reflow

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