onsemi SiC Power N-Channel MOSFET, 55 A, 650 V N, 4-Pin TO-247 NTH4L045N065SC1
- RS庫存編號:
- 229-6459
- 製造零件編號:
- NTH4L045N065SC1
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 450 件）*
HK$32,620.95
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單位 | 每單位 | 每管* |
|---|---|---|
| 450 - 900 | HK$72.491 | HK$32,620.95 |
| 1350 - 1800 | HK$71.041 | HK$31,968.45 |
| 2250 + | HK$69.62 | HK$31,329.00 |
* 參考價格
- RS庫存編號:
- 229-6459
- 製造零件編號:
- NTH4L045N065SC1
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | SiC Power | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Forward Voltage Vf | 4.4V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Power Dissipation Pd | 187W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.8mm | |
| Standards/Approvals | No | |
| Height | 22.74mm | |
| Width | 5.2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series SiC Power | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Forward Voltage Vf 4.4V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Power Dissipation Pd 187W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 15.8mm | ||
Standards/Approvals No | ||
Height 22.74mm | ||
Width 5.2mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
相关链接
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