onsemi SiC Power N-Channel MOSFET, 46 A, 650 V N, 4-Pin TO-247
- RS庫存編號:
- 229-6462
- 製造零件編號:
- NTH4L060N090SC1
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 450 件）*
HK$31,540.50
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單位 | 每單位 | 每管* |
|---|---|---|
| 450 - 900 | HK$70.09 | HK$31,540.50 |
| 1350 - 1800 | HK$68.688 | HK$30,909.60 |
| 2250 + | HK$67.314 | HK$30,291.30 |
* 參考價格
- RS庫存編號:
- 229-6462
- 製造零件編號:
- NTH4L060N090SC1
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | SiC Power | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 84mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Forward Voltage Vf | 3.9V | |
| Maximum Power Dissipation Pd | 221W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 15.8mm | |
| Width | 5.2mm | |
| Height | 22.74mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series SiC Power | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 84mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22V | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Forward Voltage Vf 3.9V | ||
Maximum Power Dissipation Pd 221W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 15.8mm | ||
Width 5.2mm | ||
Height 22.74mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
相关链接
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