Infineon iPB N-Channel MOSFET, 120 A, 100 V N, 3-Pin TO-263 IPB020N10N5LFATMA1

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HK$29,726.00

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RS庫存編號:
258-3785
製造零件編號:
IPB020N10N5LFATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

N

Forward Voltage Vf

890mV

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

313W

Typical Gate Charge Qg @ Vgs

195nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS, IEC 61249-2-21

Automotive Standard

No

Infineon iPB Series MOSFET, 100V Maximum Drain-Source Voltage, 120A Maximum Continuous Drain Current - IPB020N10N5LFATMA1


This MOSFET is a high-current N-channel power transistor designed for surface-mounted power switching in demanding thermal environments. It operates across a wide ambient range and provides strong conduction performance for applications requiring substantial continuous drain current and moderate gate-drive energy.

Features and Benefits:


• Low on-resistance reduces conduction losses for high-current operation
• High power dissipation enables sustained load handling at elevated dissipation
• Robust drain-source voltage rating allows safe switching up to 100V
• Large continuous drain current capacity supports heavy-current systems
• Moderate gate charge balances switching speed and gate-drive demands

Applications


• Suitable for high-current DC power distribution blocks
• Ideal for switch-mode power supplies in Compact systems
• Used with motor drivers requiring 100V tolerances
• Can be used for server and telecoms power stages
• Suitable for industrial converters operating at elevated temperatures

What ambient temperatures can it tolerate?


It functions over a broad range from -55°C to 150°C, supporting both cold-start and high-temperature operation.

How is it packaged for PCB assembly?


It is supplied in a TO-263 surface-mount package intended for board-mounted power installations.

What gate-drive considerations apply for switching performance?


The typical total gate charge is 195 nC, which informs gate-driver current and switching timing requirements.

What safety limits govern gate-to-source excursions?


The maximum permissible gate-source voltage is 20V and should not be exceeded to avoid device stress.

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