Vishay SI N-Channel MOSFET, 17 A, 100 V Enhancement, 8-Pin SO-8 SI4190BDY-T1-GE3

此圖片僅供參考,請參閲產品詳細資訊及規格

小計(1 卷,共 2500 件)*

HK$25,770.00

Add to Basket
選擇或輸入數量
库存信息目前无法访问 - 请稍候查看
單位
每單位
每卷*
2500 +HK$10.308HK$25,770.00

* 參考價格

RS庫存編號:
279-9894
製造零件編號:
SI4190BDY-T1-GE3
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SI

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.093Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

8.4W

Typical Gate Charge Qg @ Vgs

95nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

相关链接