P-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC Vishay SI4435DDY-T1-GE3

RS庫存編號:: 710-3339
製造零件編號:: SI4435DDY-T1-GE3
製造商:: Vishay

產品概覽和技術數據資料表 (2)

P-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC Vishay SI4435DDY-T1-GE3

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1550 現貨庫存，可於3工作日發貨。

單價个（每托盘 10 ）

HK$4.638

單位	每單位	每包*
10 - 620	HK$4.638	HK$46.38
630 - 1240	HK$4.523	HK$45.23
1250 +	HK$4.453	HK$44.53

* 參考價格

RS庫存編號:: 710-3339
製造零件編號:: SI4435DDY-T1-GE3
製造商:: Vishay

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	8.1 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	24 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	4mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	5mm
Typical Gate Charge @ Vgs	15 nC @ 4.5 V, 32 nC @ 10 V
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.5mm

P-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC Vishay SI4435DDY-T1-GE3

產品概覽和技術數據資料表 (2)

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor