P-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC Vishay SI4435DDY-T1-GE3

RS庫存編號:: 919-0288
製造零件編號:: SI4435DDY-T1-GE3
製造商:: Vishay

P-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC Vishay SI4435DDY-T1-GE3

可供預購。

單價个（每带 2500 ）

HK$2.603

單位	每單位	每卷*
2500 - 10000	HK$2.603	HK$6,507.50
12500 +	HK$2.551	HK$6,377.50

* 參考價格

RS庫存編號:: 919-0288
製造零件編號:: SI4435DDY-T1-GE3
製造商:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	8.1 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	24 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Length	5mm
Typical Gate Charge @ Vgs	15 nC @ 4.5 V, 32 nC @ 10 V
Transistor Material	Si
Width	4mm
Height	1.5mm
Minimum Operating Temperature	-55 °C

P-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC Vishay SI4435DDY-T1-GE3

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor