N-Channel MOSFET, 11.5 A, 600 V, 3-Pin DPAK Toshiba TK12P60W,RVQ(S

RS庫存編號:: 799-5019
製造零件編號:: TK12P60W,RVQ(S
製造商:: Toshiba

N-Channel MOSFET, 11.5 A, 600 V, 3-Pin DPAK Toshiba TK12P60W,RVQ(S

1665 現貨庫存，可於3工作日發貨。

單價个（每托盘 5 ）

HK$12.798

單位	每單位	每包*
5 - 495	HK$12.798	HK$63.99
500 - 995	HK$12.574	HK$62.87
1000 +	HK$12.344	HK$61.72

* 參考價格

RS庫存編號:: 799-5019
製造零件編號:: TK12P60W,RVQ(S
製造商:: Toshiba

TK12P60W_E
TK12P60W, MOSFET Silicon N-Channel MOS (DTMOS IV)
TK12P60W N-Channel MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.5 A
Maximum Drain Source Voltage	600 V
Package Type	DPAK (TO-252)
Series	DTMOSIV
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	340 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	100 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Transistor Material	Si
Width	7.18mm
Typical Gate Charge @ Vgs	25 nC @ 10 V
Length	6.6mm
Maximum Operating Temperature	+150 °C
Height	2.3mm