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    N-Channel MOSFET, 56 A, 100 V, 3-Pin TO-247 Fairchild HUF75639G3

    Fairchild Semiconductor
    RS庫存編號:
    807-6692
    製造零件編號:
    HUF75639G3
    製造商:
    Fairchild Semiconductor
    查看所有MOSFETs
    可供預購。
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    單位

    已增加

    單價 /個 (每包:2個)

    HK$19.67

    單位Per unitPer Pack*
    2 - 8HK$19.67HK$39.34
    10 - 18HK$15.87HK$31.74
    20 - 98HK$14.76HK$29.52
    100 - 198HK$13.49HK$26.98
    200 +HK$11.905HK$23.81
    * 參考價格
    RS庫存編號:
    807-6692
    製造零件編號:
    HUF75639G3
    製造商:
    Fairchild Semiconductor

    法例與合規


    產品詳細資訊

    UltraFET® MOSFET, Fairchild Semiconductor


    UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
    Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.


    MOSFET Transistors, ON Semi


    ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
    ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

    規格

    AttributeValue
    Channel TypeN
    Maximum Continuous Drain Current56 A
    Maximum Drain Source Voltage100 V
    Package TypeTO-247
    Mounting TypeThrough Hole
    Pin Count3
    Maximum Drain Source Resistance25 mΩ
    Channel ModeEnhancement
    Minimum Gate Threshold Voltage2V
    Maximum Power Dissipation200 W
    Transistor ConfigurationSingle
    Maximum Gate Source Voltage-20 V, +20 V
    Number of Elements per Chip1
    Typical Gate Charge @ Vgs110 nC @ 20 V
    Width4.82mm
    Maximum Operating Temperature+175 °C
    Transistor MaterialSi
    Length15.87mm
    Height20.82mm
    Minimum Operating Temperature-55 °C
    SeriesUltraFET
    可供預購。
    Add to Basket
    單位

    已增加

    單價 /個 (每包:2個)

    HK$19.67

    單位Per unitPer Pack*
    2 - 8HK$19.67HK$39.34
    10 - 18HK$15.87HK$31.74
    20 - 98HK$14.76HK$29.52
    100 - 198HK$13.49HK$26.98
    200 +HK$11.905HK$23.81
    * 參考價格