Infineon 4 kB Serial-SPI FRAM 8-Pin SOIC, FM25L04B-G
- RS庫存編號:
- 273-7386
- 製造零件編號:
- FM25L04B-G
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 97 件)*
HK$1,019.373
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年7月21日 發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 97 - 97 | HK$10.509 | HK$1,019.37 |
| 194 + | HK$10.194 | HK$988.82 |
* 參考價格
- RS庫存編號:
- 273-7386
- 製造零件編號:
- FM25L04B-G
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | FRAM | |
| Memory Size | 4kB | |
| Organisation | 512 x 8 bit | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 20MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Standards/Approvals | Restriction of hazardous substances (RoHS) | |
| Maximum Operating Temperature | 85°C | |
| Number of Bits per Word | 8 | |
| Maximum Supply Voltage | 3.6V | |
| Number of Words | 512 | |
| Minimum Operating Temperature | 40°C | |
| Automotive Standard | No | |
| Minimum Supply Voltage | 2.7V | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type FRAM | ||
Memory Size 4kB | ||
Organisation 512 x 8 bit | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 20MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Standards/Approvals Restriction of hazardous substances (RoHS) | ||
Maximum Operating Temperature 85°C | ||
Number of Bits per Word 8 | ||
Maximum Supply Voltage 3.6V | ||
Number of Words 512 | ||
Minimum Operating Temperature 40°C | ||
Automotive Standard No | ||
Minimum Supply Voltage 2.7V | ||
The Infineon FRAM is a 4 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Very fast serial peripheral Interface
Sophisticated write protection scheme
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
相关链接
- Infineon 4 kB Serial-SPI FRAM 8-Pin SOIC
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