Infineon CoolMOS CE N-Channel MOSFET, 14.1 A, 550 V Enhancement, 3-Pin TO-252 IPD50R380CEAUMA1

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小計（1 卷，共 2500 件）*

HK$9,487.50

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2500 - 10000HK$3.795HK$9,487.50
12500 +HK$3.719HK$9,297.50

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RS庫存編號:
168-5909
製造零件編號:
IPD50R380CEAUMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

14.1A

Maximum Drain Source Voltage Vds

550V

Package Type

TO-252

Series

CoolMOS CE

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

380mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

24.8nC

Maximum Gate Source Voltage Vgs

-30V, +30V

Maximum Power Dissipation Pd

98W

Forward Voltage Vf

850mV

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

6.22mm

Standards/Approvals

No

Height

2.41mm

Length

6.73mm

Automotive Standard

No

COO (Country of Origin):
CN

Infineon CoolMOS™ CE Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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