onsemi SiC Power N-Channel MOSFET, 62 A, 650 V N, 7-Pin TO-263 NTBG045N065SC1
- RS庫存編號:
- 229-6444
- 製造零件編號:
- NTBG045N065SC1
- 製造商:
- onsemi
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HK$107.10
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| 1 - 9 | HK$107.10 |
| 10 - 99 | HK$104.00 |
| 100 - 249 | HK$100.60 |
| 250 - 499 | HK$98.50 |
| 500 + | HK$96.30 |
* 參考價格
- RS庫存編號:
- 229-6444
- 製造零件編號:
- NTBG045N065SC1
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SiC Power | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 105nC | |
| Forward Voltage Vf | 4.8V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Power Dissipation Pd | 242W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.7mm | |
| Length | 10.2mm | |
| Standards/Approvals | No | |
| Height | 9.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SiC Power | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 105nC | ||
Forward Voltage Vf 4.8V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Power Dissipation Pd 242W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 4.7mm | ||
Length 10.2mm | ||
Standards/Approvals No | ||
Height 9.4mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
相关链接
- onsemi SiC Power N-Channel MOSFET 650 V N, 7-Pin TO-263 NTBG045N065SC1
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