Infineon iPB N-Channel MOSFET, 100 A, 40 V Enhancement TO-263 IPB100N04S4H2ATMA1
- RS庫存編號:
- 259-1548
- 製造零件編號:
- IPB100N04S4H2ATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 包,共 5 件)*
HK$117.90
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | HK$23.58 | HK$117.90 |
| 50 - 95 | HK$22.36 | HK$111.80 |
| 100 - 245 | HK$21.10 | HK$105.50 |
| 250 - 495 | HK$19.62 | HK$98.10 |
| 500 + | HK$18.04 | HK$90.20 |
* 參考價格
- RS庫存編號:
- 259-1548
- 製造零件編號:
- IPB100N04S4H2ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon optimos-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control. Thus optimos-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
N-channel enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
Ultra low Rds(on)
100% avalanche tested
相关链接
- Infineon iPB N-Channel MOSFET 40 V Enhancement TO-263 IPB100N04S4H2ATMA1
- Infineon iPB N-Channel MOSFET, 90 A Enhancement TO-263
- Infineon iPB N-Channel MOSFET, 90 A Enhancement TO-263 IPB90N06S404ATMA2
- Infineon iPB N-Channel MOSFET, 120 A Enhancement TO-263 IPB120N06S403ATMA2
- Infineon iPB N-Channel MOSFET, 180 A Enhancement TO-263 IPB180N10S402ATMA1
- Infineon iPB N-Channel MOSFET 100 V Enhancement TO-263
- Infineon iPB N-Channel MOSFET 100 V Enhancement TO-263 IPB180N10S403ATMA1
- Infineon iPB N-Channel MOSFET 60 V Enhancement TO-263 IPB180N06S4H1ATMA2
