Infineon iPB N-Channel MOSFET, 180 A, 60 V Enhancement TO-263 IPB180N06S4H1ATMA2
- RS庫存編號:
- 260-5119
- 製造零件編號:
- IPB180N06S4H1ATMA2
- 製造商:
- Infineon
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小計(1 卷,共 1000 件)*
HK$17,436.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年1月19日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 + | HK$17.436 | HK$17,436.00 |
* 參考價格
- RS庫存編號:
- 260-5119
- 製造零件編號:
- IPB180N06S4H1ATMA2
- 製造商:
- Infineon
規格
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Maximum Drain Source Resistance Rds | 1.70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series iPB | ||
Package Type TO-263 | ||
Maximum Drain Source Resistance Rds 1.70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon iPB Series MOSFET, 60V Maximum Drain-Source Voltage, 180A Maximum Continuous Drain Current - IPB180N06S4H1ATMA2
This device is an N‑channel enhancement‑mode power transistor designed for high-current switching in demanding environments. It operates across a wide temperature span and is supplied in a TO‑263 package suitable for power assemblies. The component meets automotive qualification and environmental restriction standards for use in vehicle systems and other applications requiring robust thermal and electrical performance.
Features and Benefits:
• 60V drain‑source rating allows robust voltage headroom for switching
• 180A continuous current capability supports heavy-load operation
• 1.7mΩ on‑resistance reduces conduction losses during high currents
• -55°C to175°C junction range enables extreme temperature endurance
• TO‑263 package eases mounting and thermal dissipation for assemblies
• 180A continuous current capability supports heavy-load operation
• 1.7mΩ on‑resistance reduces conduction losses during high currents
• -55°C to175°C junction range enables extreme temperature endurance
• TO‑263 package eases mounting and thermal dissipation for assemblies
Applications
• Suitable for automotive power distribution and motor drives
• Ideal for high-current DC switching in battery systems
• Used with power converters in industrial control equipment
• Can be used for load switching in harsh temperature environments
• Ideal for high-current DC switching in battery systems
• Used with power converters in industrial control equipment
• Can be used for load switching in harsh temperature environments
What certification indicates suitability for automotive use?
It holds AEC‑Q101 qualification appropriate for automotive power devices.
Which lead‑frame package is provided for PCB mounting?
The component is supplied in a TO‑263 surface‑mount package.
What environmental restriction standard does it comply with?
It conforms to RoHS requirements limiting hazardous substances.
What channel polarity and mode does it employ?
It is an N‑channel device operating in enhancement mode.
相关链接
- Infineon iPB N-Channel MOSFET 60 V Enhancement TO-263 IPB180N06S4H1ATMA2
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