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Infineon iPB N-Channel MOSFET, 180 A, 100 V Enhancement TO-263

Name: Infineon iPB N-Channel MOSFET, 180 A, 100 V Enhancement TO-263
Brand: Infineon
SKU: 258-3802
Availability: InStock

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小計（1 卷，共 1000 件）*

HK$25,700.00

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-263
	Series	iPB
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	3.3mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	250W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	108nC
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-263
	Series iPB
	Mount Type Surface
	Maximum Drain Source Resistance Rds 3.3mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 250W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 108nC
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

The Infineon OptiMOS-T2 power-transistor is N-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

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