Infineon iPB Type P-Channel MOSFET, 180 A, 40 V Enhancement, 7-Pin TO-263 IPB180P04P4L02ATMA2

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HK$13,694.00

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RS庫存編號:
229-1820
製造零件編號:
IPB180P04P4L02ATMA2
製造商:
Infineon
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品牌

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

2.4mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

150W

Forward Voltage Vf

-1.3V

Maximum Operating Temperature

+175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

Infineon iPB Series MOSFET, 150W Maximum Power Dissipation, 40V Maximum Drain Source Voltage - IPB180P04P4L02ATMA2


This MOSFET is a P-channel enhancement-mode power transistor designed for high-current switching in surface-mounted assemblies. It operates across a wide ambient temperature range and meets automotive stress qualifications for use in demanding electrical systems. The component is packaged for thermal and assembly efficiency and tolerates gate drive voltages suitable for power-control topologies.

Features and Benefits:


• Low on-resistance 2.4mΩ reduces conduction losses
• High continuous current 180A enables heavy-load switching
• 40V drain-source rating suits moderate-voltage systems
• 150W power dissipation supports sustained power handling
• Gate tolerance 16V allows robust control-voltage margins
• Temperature rating −55°C to +175°C sustains extreme environments

Applications


• Suitable for automotive power distribution units
• Ideal for high-current DC-DC converter stages
• Used for motor driver high-side switching
• Can be used for battery management protection circuits
• Suitable for surface-mount power modules in vehicles

What mounting style does it require for PCB assembly?


It is supplied in a TO-263 package intended for surface mounting.

How does it perform under continuous high current?


It supports continuous drain currents up to 180A with a maximum power dissipation of 150W.

What gate voltage range should be observed during operation?


Gate-source voltage should not exceed 16V to prevent device stress.

Is it suitable for use across wide temperature extremes?


The device is rated for operation from −55°C up to +175°C for high-temperature applications.

What type of channel and conduction mode does it use?


It employs a P-type channel operating in enhancement mode.

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