STMicroelectronics N-Channel MOSFET, 64 A, 650 V, 3-Pin ACEPACK SMIT SH68N65DM6AG
- RS庫存編號:
- 261-5479
- 製造零件編號:
- SH68N65DM6AG
- 製造商:
- STMicroelectronics
可享批量折扣
查看批量定價選項小計（1 卷，共 200 件）*
HK$78,548.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年10月18日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 200 - 200 | HK$392.74 | HK$78,548.00 |
| 400 - 400 | HK$380.958 | HK$76,191.60 |
| 600 + | HK$369.529 | HK$73,905.80 |
* 參考價格
- RS庫存編號:
- 261-5479
- 製造零件編號:
- SH68N65DM6AG
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | ACEPACK SMIT | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Typical Gate Charge Qg @ Vgs | 116nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type ACEPACK SMIT | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25V | ||
Typical Gate Charge Qg @ Vgs 116nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The STMicroelectronics combination of two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly. The DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The high design flexibility of the package enables several configurations, including phase legs, boost, and single switch through different combinations of the internal power switches.
Half bridge power module
650 V blocking voltage
Fast recovery body diode
Very low switching energies
Low package inductance
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