Infineon OptiMOS Type N-Channel MOSFET, 4.7 A, 600 V Enhancement, 3-Pin PG-TO252-3 IPD60R1K0PFD7SAUMA1

RS庫存編號:: 273-3009
製造零件編號:: IPD60R1K0PFD7SAUMA1
製造商:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 4.7 A, 600 V Enhancement, 3-Pin PG-TO252-3 IPD60R1K0PFD7SAUMA1

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 2500 件）*

HK$6,812.50

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單位	每單位	每卷*
2500 +	HK$2.725	HK$6,812.50

* 參考價格

RS庫存編號:: 273-3009
製造零件編號:: IPD60R1K0PFD7SAUMA1
製造商:: Infineon

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4.7A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PG-TO252-3
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	6nC
	Maximum Power Dissipation Pd	26W
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4.7A
	Maximum Drain Source Voltage Vds 600V
	Package Type PG-TO252-3
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 6nC
	Maximum Power Dissipation Pd 26W
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IPD60R1K0PFD7SAUMA1

The Infineon 600V cool MOS PFD7 super junction MOSFET complements the cool MOS 7 offering for consumer applications. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD pac

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

Infineon OptiMOS Type N-Channel MOSFET, 4.7 A, 600 V Enhancement, 3-Pin PG-TO252-3 IPD60R1K0PFD7SAUMA1

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