Infineon RF Amplifier Low Noise 18.1 dB, 6-Pin 2690 MHz TSNP
- RS庫存編號:
- 258-0655
- 製造零件編號:
- BGA5H1BN6E6327XTSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 258-0655
- 製造零件編號:
- BGA5H1BN6E6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Amplifier Type | Low Noise | |
| Product Type | RF Amplifier | |
| Technology | Silicon Germanium | |
| Gain | 18.1dB | |
| Minimum Supply Voltage | 1.5V | |
| Package Type | TSNP | |
| Maximum Supply Voltage | 3.6V | |
| Pin Count | 6 | |
| Noise Figure | 1.2dB | |
| Minimum Operating Temperature | -40°C | |
| P1dB - Compression Point | 60mW | |
| Third Order Intercept OIP3 | -6dBm | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | BGA5H1BN6 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Amplifier Type Low Noise | ||
Product Type RF Amplifier | ||
Technology Silicon Germanium | ||
Gain 18.1dB | ||
Minimum Supply Voltage 1.5V | ||
Package Type TSNP | ||
Maximum Supply Voltage 3.6V | ||
Pin Count 6 | ||
Noise Figure 1.2dB | ||
Minimum Operating Temperature -40°C | ||
P1dB - Compression Point 60mW | ||
Third Order Intercept OIP3 -6dBm | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Series BGA5H1BN6 | ||
Automotive Standard No | ||
The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.
Low current consumption of 8.5 mA
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
相关链接
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