Infineon RF Amplifier Low Noise 18.1 dB, 6-Pin 2690MHz TSNP
- RS庫存編號:
- 258-0655
- 製造零件編號:
- BGA5H1BN6E6327XTSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 258-0655
- 製造零件編號:
- BGA5H1BN6E6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | RF Amplifier | |
| Amplifier Type | Low Noise | |
| Technology | Silicon Germanium | |
| Gain | 18.1dB | |
| Minimum Supply Voltage | 1.5V | |
| Package Type | TSNP | |
| Pin Count | 6 | |
| Maximum Supply Voltage | 3.6V | |
| P1dB - Compression Point | 60mW | |
| Minimum Operating Temperature | -40°C | |
| Noise Figure | 1.2dB | |
| Third Order Intercept OIP3 | -6dBm | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Series | BGA5H1BN6 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type RF Amplifier | ||
Amplifier Type Low Noise | ||
Technology Silicon Germanium | ||
Gain 18.1dB | ||
Minimum Supply Voltage 1.5V | ||
Package Type TSNP | ||
Pin Count 6 | ||
Maximum Supply Voltage 3.6V | ||
P1dB - Compression Point 60mW | ||
Minimum Operating Temperature -40°C | ||
Noise Figure 1.2dB | ||
Third Order Intercept OIP3 -6dBm | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
Series BGA5H1BN6 | ||
The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.
Low current consumption of 8.5 mA
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count
相关链接
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