BGA855N6E6327XTSA1 Infineon RF Amplifier Low Noise 17.8 dB, 6-Pin 1300MHz TSNP
- RS庫存編號:
- 258-0667
- 製造零件編號:
- BGA855N6E6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 12000 件）*
HK$32,016.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年4月09日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 12000 - 12000 | HK$2.668 | HK$32,016.00 |
| 24000 - 24000 | HK$2.615 | HK$31,380.00 |
| 36000 + | HK$2.537 | HK$30,444.00 |
* 參考價格
- RS庫存編號:
- 258-0667
- 製造零件編號:
- BGA855N6E6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Operating Frequency | 1300MHz | |
| Product Type | RF Amplifier | |
| Amplifier Type | Low Noise | |
| Technology | Silicon Germanium | |
| Mount Type | Surface | |
| Gain | 17.8dB | |
| Package Type | TSNP | |
| Minimum Supply Voltage | 1.1V | |
| Pin Count | 6 | |
| Maximum Supply Voltage | 3.3V | |
| P1dB - Compression Point | 60mW | |
| Third Order Intercept OIP3 | 0dBm | |
| Minimum Operating Temperature | -40°C | |
| Noise Figure | 1.1dB | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | BGA855N6 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Operating Frequency 1300MHz | ||
Product Type RF Amplifier | ||
Amplifier Type Low Noise | ||
Technology Silicon Germanium | ||
Mount Type Surface | ||
Gain 17.8dB | ||
Package Type TSNP | ||
Minimum Supply Voltage 1.1V | ||
Pin Count 6 | ||
Maximum Supply Voltage 3.3V | ||
P1dB - Compression Point 60mW | ||
Third Order Intercept OIP3 0dBm | ||
Minimum Operating Temperature -40°C | ||
Noise Figure 1.1dB | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Series BGA855N6 | ||
Automotive Standard No | ||
Infineon BGA855N6 Series RF Amplifier, 0.60dB Noise Figure, 17.8dB Gain - BGA855N6E6327XTSA1
This RF amplifier is a silicon-germanium low-noise amplifier designed for single-frequency RF stages operating at 1300MHz. It is a surface-mount device supplied in a TSNP package and intended for systems requiring low-voltage operation and Compact board integration. The device functions across a wide temperature range and conforms to JEDEC47 mechanical standards for reliability in assembly and handling.
Features and Benefits:
• 0.60dB noise figure for improved weak-signal reception
• 17.8dB gain to increase signal amplitude with low distortion
• 1.1 to 3.3V supply range for low-voltage system compatibility
• P1dB 60 mW output compression point to maintain linearity under drive
• OIP3 0 dBm for third-order intermodulation characterisation
• 17.8dB gain to increase signal amplitude with low distortion
• 1.1 to 3.3V supply range for low-voltage system compatibility
• P1dB 60 mW output compression point to maintain linearity under drive
• OIP3 0 dBm for third-order intermodulation characterisation
Applications
• Suitable for single-frequency receiver front-ends
• Ideal for short-range RF communication modules
• Used with Compact surface-mount transceiver assemblies
• Can be used for low-power wireless test platforms
• Suitable for laboratory evaluation of SiGe amplifier stages
• Ideal for short-range RF communication modules
• Used with Compact surface-mount transceiver assemblies
• Can be used for low-power wireless test platforms
• Suitable for laboratory evaluation of SiGe amplifier stages
What supply voltages are required for operation?
It operates from a minimum of 1.1V up to a maximum of 3.3V.
What thermal conditions can it tolerate during use?
The device is rated from -40 to 85°C for operating environments.
What package and mounting method does it use?
It is supplied in a TSNP package intended for surface mounting.
How many electrical connections does the device provide?
The component has a pin count of 6 for PCB interfacing.
相关链接
- BGA855N6E6327XTSA1 Infineon RF Amplifier Low Noise 17.8 dB, 6-Pin 1300MHz TSNP
- BGA125N6E6327XTSA1 Infineon RF Amplifier Low Noise 22.2 dB, 6-Pin 1300MHz TSNP
- Infineon RF Amplifier Low Noise 21 dB, 9-Pin 4200MHz TSNP
- BGA9V1MN9E6327XTSA1 Infineon RF Amplifier Low Noise 21 dB, 9-Pin 4200MHz TSNP
- BGA9C1MN9E6327XTSA1 Infineon RF Amplifier Low Noise 19 dB, 9-Pin 5000MHz TSNP
- BGA729N6E6327XTSA1 Infineon RF Amplifier Low Noise 16.3 dB, 6-Pin 1000MHz TSNP
- BGA715N7E6327XTSA2 Infineon RF Amplifier Low Noise 20 dB, 7-Pin 1.615GHz TSNP
- BGA123N6E6327XTSA1 Infineon RF Amplifier Low Noise 21.2 dB, 6-Pin 1615MHz TSNP