BGA5H1BN6E6327XTSA1 Infineon RF Amplifier Low Noise 18.1 dB, 6-Pin 2690 MHz TSNP

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有RF Amplifiers ICs
暫時無法供應
我們無法確定此產品何時有貨，RS 預計將其從我們的產品目錄中移除。
包裝方式：
RS庫存編號:
258-0656
製造零件編號:
BGA5H1BN6E6327XTSA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

RF Amplifier

Amplifier Type

Low Noise

Technology

Silicon Germanium

Gain

18.1dB

Minimum Supply Voltage

1.5V

Package Type

TSNP

Maximum Supply Voltage

3.6V

Pin Count

6

Minimum Operating Temperature

-40°C

Noise Figure

1.2dB

P1dB - Compression Point

60mW

Third Order Intercept OIP3

-6dBm

Maximum Operating Temperature

85°C

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

Series

BGA5H1BN6

The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function

increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.

Low current consumption of 8.5 mA

Multi-state control: Bypass- and high gain-Mode

Ultra small TSNP-6-10 leadless package

RF output internally matched to 50 Ohm

Low external component count

相关链接

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。