IGBTs | Insulated Gate Bipolar Transistor | RS
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    IGBTs

    IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors: Bipolar transistors and MOSFET. RS have a curated range of IGBTs from a multitude of trusted brands, including Infineon, ON Semiconductor, STMicroelectronics, and many more.

    How do IGBT transistors work?

    IGBT transistors are three-terminal devices which apply a voltage to a semiconductor, changing its properties to block power flow when it's in the off state and allow power flow in the on state. They are controlled by a metal oxide semiconductor gate structure and are widely used for switching electrical power in applications, such as welding, electric cars, air conditioners, trains, and uninterruptible power supplies.

    What are the different types of IGBT Transistors?

    There are various types of IGBT transistors and they are categorised by different parameters, such as maximum voltage, collector current, packaging type, and switching speed. The type of IGBT transistor you choose will vary depending on the exact power level and the applications being considered, and so it is important to know as many of your exact requirements as possible to choose the correct IGBT for your application.

    What is a difference between MOSFETs and IGBTs?

    An IGBT has a much lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices. However, MOSFETs are characterised by a lower forward voltage at lower current densities due to the absence of diode Vf in the IGBT's output BJT.An IGBT transistor module (insulated-gate bipolar transistor) consists of one or more IGBTs and is used in many types of industrial equipment due to its reliability. IGBT transistors are a cross between bipolar junction transistors (BJTs) and MOSFETs. They are highly efficient and fast switching, plus they have high current and low saturation voltage characteristics.

    What is a typical application of IGBTs?

    IGBTs are widely used in electronic applications, including: consumer electronics, industrial technology, transportation and electric motors, aerospace electronic devices, and applications within the energy sector.

    2345 產品顯示為 IGBTs

    Infineon
    27 A
    600 V
    +/-20V
    94 W
    -
    -
    Module
    Panel Mount
    -
    -
    -
    -
    -
    Vishay
    281 A
    1200 V
    ± 20V
    1.09 kW
    1
    Single
    SOT-227
    Panel Mount
    N
    4
    -
    -
    -
    Semikron Danfoss
    300 A
    1200 V
    ±20V
    -
    -
    Dual Half Bridge
    SEMITRANS3
    Panel Mount
    N
    7
    -
    Series
    106.4 x 61.4 x 30.5mm
    Semikron Danfoss
    314 A
    1200 V
    ±20V
    -
    -
    Dual Half Bridge
    SEMITRANS3
    Panel Mount
    N
    7
    -
    Series
    106.4 x 61.4 x 30mm
    Infineon
    1.8 kA
    4500 V
    -
    4000 kW
    3
    Single
    AG-IHVB190
    -
    -
    -
    -
    -
    -
    Infineon
    750 A
    1700 V
    ±20V
    20 mW
    2
    -
    -
    -
    -
    -
    -
    -
    -
    onsemi
    80 A
    600 V
    ±20V
    115 W
    -
    -
    TO-3PF
    Through Hole
    N
    3
    1MHz
    Single
    15.7 x 3.2 x 26.7mm
    Semikron Danfoss
    400 A
    1200 V
    20V
    -
    2
    Dual
    SEMITRANS3
    Screw Mount
    N
    7
    12kHz
    Half Bridge
    106.4 x 61.4 x 30.5mm
    STMicroelectronics
    200 A
    600 V
    ±20V
    -
    -
    -
    ISOTOP
    Panel Mount
    N
    4
    -
    Single
    38.2 x 25.5 x 9.1mm
    IXYS
    32 A
    1700 V
    ±20V
    -
    -
    -
    TO-247AD
    Through Hole
    N
    3
    -
    Single
    16.26 x 5.3 x 21.46mm
    onsemi
    -
    600 V
    -
    50 W
    6
    -
    DIP
    -
    N
    38
    -
    Series
    -
    onsemi
    -
    600 V
    -
    50 W
    6
    -
    DIP
    -
    N
    38
    -
    Series
    -
    IXYS
    240 A
    1200 V
    ±20V
    1.5 kW
    -
    -
    PLUS247
    Through Hole
    N
    3
    50kHz
    Single
    16.13 x 5.21 x 21.34mm
    Infineon
    140 A
    600 V
    +/-20V
    714 W
    1
    -
    PG-TO247-3
    Through Hole
    -
    3
    -
    -
    -
    STMicroelectronics
    80 A
    650 V
    ±20V
    283 W
    -
    -
    TO-247
    Through Hole
    N
    3
    -
    Single
    15.75 x 5.15 x 20.15mm
    IXYS
    64 A
    1200 V
    ±20V
    480 W
    -
    -
    TO-247
    Through Hole
    N
    3
    50kHz
    Single
    16.26 x 5.3 x 21.46mm
    Mitsubishi Electric
    600 A
    600 V
    20V
    4.17 kW
    2
    Dual
    94x48mm
    -
    -
    -
    -
    Dual
    -
    Infineon
    34 A
    650 V
    30V
    35.3 W
    1
    Single
    PG-TO220
    -
    N
    3
    -
    Single
    -
    Infineon
    1.8 kA
    4500 V
    -
    4000 kW
    3
    Single
    AG-IHVB190
    -
    -
    -
    -
    -
    -
    Infineon
    150 A
    1200 V
    20V
    20 mW
    -
    -
    -
    -
    -
    -
    -
    -
    -
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