Vishay TrenchFET N-Channel Power MOSFET, 19 A, 60 V N, 8-Pin PowerPAK SIHH150N60E-T1-FE3
- RS庫存編號:
- 851-496
- 製造零件編號:
- SIHH150N60E-T1-FE3
- 製造商:
- Vishay
N
享受批量購買折扣
額外添加10件可節省37%
查看批量定價選項小計（1 組，共 1 件）*
HK$45.67
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年7月13日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 | 節省 |
|---|---|---|
| 1 - 9 | HK$45.67 | - |
| 10 - 49 | HK$28.36 | 37% |
| 50 - 99 | HK$17.20 | 62% |
| 100 + | HK$16.75 | 63% |
* 參考價格
- RS庫存編號:
- 851-496
- 製造零件編號:
- SIHH150N60E-T1-FE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | PowerPAK | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0Ω | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type PowerPAK | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0Ω | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 6mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- IL
The Vishay Power MOSFET designed to deliver high efficiency in power management applications, optimising performance in demanding environments.
Utilises Advanced E series technology for improved energy efficiency
Offers low figure-of-merit, enhancing overall performance
Reduces conduction and switching losses significantly for enhanced longevity
Avalanche rated, ensuring reliable operation under extreme conditions
相关链接
- Vishay SIHH N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH150N60E-T1-GE3
- Vishay TrenchFET N-Channel Power MOSFET 60 V N, 8-Pin PowerPAK SIR692DP-T1-UE3
- Vishay TrenchFET N-Channel Power MOSFET 70 V N, 8-Pin PowerPAK SISS178LDN-T1-BE3
- Vishay TrenchFET N-Channel Power MOSFET 70 V N, 8-Pin PowerPAK SISS176LDN-T1-BE3
- Vishay TrenchFET N-Channel Power MOSFET 250 V N, 8-Pin PowerPAK SIR692DP-T1-BE3
- Vishay TrenchFET N-Channel Power MOSFET 80 V N, 8-Pin PowerPAK SIR178DP-T1-UE3
- Vishay TrenchFET N-Channel Power MOSFET 80 V N, 8-Pin PowerPAK SIR178DP-T1-BE3
- Vishay TrenchFET N-Channel MOSFET 45 V Enhancement, 8-Pin PowerPAK SIR608DP-T1-BE3