Infineon

Discrete Semiconductors

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  • HK$1.40
    個 (在毎卷:1000)
BSS606NH6327XTSA1 N-Channel MOSFET, 3.2 A, 60 V OptiMOS 3, 4-Pin PG-SOT-89 Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current3.2 A
  • Maximum Drain Source Voltage60 V
  • Maximum Drain Source Resistance90 mΩ
  • Maximum Gate Threshold Voltage2.3V
See similar products in MOSFETs
  • HK$3.285
    /個 (每包:50個)
BSS606NH6327XTSA1 N-Channel MOSFET, 3.2 A, 60 V OptiMOS 3, 4-Pin PG-SOT-89 Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current3.2 A
  • Maximum Drain Source Voltage60 V
  • Maximum Drain Source Resistance90 mΩ
  • Maximum Gate Threshold Voltage2.3V
See similar products in MOSFETs
  • HK$19.674
    毎管:50 個
IRLB3034PBF N-Channel MOSFET, 343 A, 40 V HEXFET, 3-Pin TO-220AB Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current343 A
  • Maximum Drain Source Voltage40 V
  • Maximum Drain Source Resistance2 mΩ
  • Maximum Gate Threshold Voltage2.5V
See similar products in MOSFETs
  • HK$20.675
    /個 (每包:2個)
IRLB3034PBF N-Channel MOSFET, 343 A, 40 V HEXFET, 3-Pin TO-220AB Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current343 A
  • Maximum Drain Source Voltage40 V
  • Maximum Drain Source Resistance2 mΩ
  • Maximum Gate Threshold Voltage2.5V
See similar products in MOSFETs
  • HK$30.24
IRFB4227PBF N-Channel MOSFET, 65 A, 200 V HEXFET, 3-Pin TO-220AB Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current65 A
  • Maximum Drain Source Voltage200 V
  • Maximum Drain Source Resistance24 mΩ
  • Maximum Gate Threshold Voltage5V
See similar products in MOSFETs
  • HK$16.596
    毎管:50 個
IRFB4227PBF N-Channel MOSFET, 65 A, 200 V HEXFET, 3-Pin TO-220AB Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current65 A
  • Maximum Drain Source Voltage200 V
  • Maximum Drain Source Resistance24 mΩ
  • Maximum Gate Threshold Voltage5V
See similar products in MOSFETs
  • HK$0.696
    個 (在毎卷:3000)
Infineon BAR6403WE6327HTSA1 PIN Diode, 100mA, 150V, 2-Pin SOD-323
  • Diode ConfigurationSingle
  • Number of Elements per Chip1
  • Maximum Forward Current100mA
  • Maximum Reverse Voltage150V
  • Typical Carrier Life Time1550ns
See similar products in PIN Diodes
  • HK$12.561
    /個 (每包:10個)
IPB120P04P4L03ATMA1 P-Channel MOSFET, 120 A, 40 V OptiMOS P, 3-Pin D2PAK Infineon
  • Channel TypeP
  • Maximum Continuous Drain Current120 A
  • Maximum Drain Source Voltage40 V
  • Maximum Drain Source Resistance5.2 mΩ
  • Maximum Gate Threshold Voltage2.2V
See similar products in MOSFETs
  • HK$9.16
    個 (在毎卷:1000)
IPB120P04P4L03ATMA1 P-Channel MOSFET, 120 A, 40 V OptiMOS P, 3-Pin D2PAK Infineon
  • Channel TypeP
  • Maximum Continuous Drain Current120 A
  • Maximum Drain Source Voltage40 V
  • Maximum Drain Source Resistance5.2 mΩ
  • Maximum Gate Threshold Voltage2.2V
See similar products in MOSFETs
  • HK$1.546
    /個 (每包:25個)
Infineon BAR6403WE6327HTSA1 PIN Diode, 100mA, 150V, 2-Pin SOD-323 MF, VHF, UHF
  • Diode ConfigurationSingle
  • Number of Elements per Chip1
  • Maximum Forward Current100mA
  • Maximum Reverse Voltage150V
  • Typical Carrier Life Time1550ns
See similar products in PIN Diodes
  • HK$0.376
    個 (在毎卷:3000)
BSS316NH6327XTSA1 N-Channel MOSFET, 1.4 A, 30 V OptiMOS 2, 3-Pin SOT-23 Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current1.4 A
  • Maximum Drain Source Voltage30 V
  • Maximum Drain Source Resistance280 mΩ
  • Maximum Gate Threshold Voltage2V
See similar products in MOSFETs
  • HK$8.95
    個 (在毎卷:1000)
IPB90N06S404ATMA2 N-Channel MOSFET, 90 A, 60 V OptiMOS T2, 3-Pin D2PAK Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current90 A
  • Maximum Drain Source Voltage60 V
  • Maximum Drain Source Resistance4 mΩ
  • Maximum Gate Threshold Voltage4V
See similar products in MOSFETs
  • HK$1,490.00
    Each (In a Tray of 4)
Infineon DDB6U145N16LHOSA1, 3-phase Bridge Rectifier Module, 145A 1600V, 6-Pin
  • Bridge TypeThree Phase
  • Peak Average Forward Current145A
  • Peak Reverse Repetitive Voltage1600V
  • Mounting TypePanel Mount
  • Pin Count6
See similar products in Bridge Rectifiers
  • HK$1,114.09
Infineon DDB6U145N16LHOSA1, 3-phase Bridge Rectifier Module, 145A 1600V, 6-Pin
  • Bridge TypeThree Phase
  • Peak Average Forward Current145A
  • Peak Reverse Repetitive Voltage1600V
  • Mounting TypePanel Mount
  • Pin Count6
See similar products in Bridge Rectifiers
  • HK$5.60
IRLZ24NPBF N-Channel MOSFET, 18 A, 55 V HEXFET, 3-Pin TO-220AB Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current18 A
  • Maximum Drain Source Voltage55 V
  • Maximum Drain Source Resistance60 mΩ
  • Maximum Gate Threshold Voltage2V
See similar products in MOSFETs
  • HK$8.573
    /個 (每包:20個)
IPB90N06S404ATMA2 N-Channel MOSFET, 90 A, 60 V OptiMOS T2, 3-Pin D2PAK Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current90 A
  • Maximum Drain Source Voltage60 V
  • Maximum Drain Source Resistance4 mΩ
  • Maximum Gate Threshold Voltage4V
See similar products in MOSFETs
  • HK$2,470.439
    Each (In a Tray of 10)
Infineon FS150R12KE3BOSA1, AG-ECONO3-4 3 Phase Bridge IGBT Module, 200 A max, 1200 V, Panel Mount
  • Configuration3 Phase Bridge
  • Transistor Configuration3 Phase
  • Maximum Continuous Collector Current200 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage±20V
See similar products in IGBT Modules
  • HK$1,673.51
Infineon FS150R12KE3BOSA1, AG-ECONO3-4 3 Phase Bridge IGBT Module, 200 A max, 1200 V, Panel Mount
  • Transistor Configuration3 Phase
  • Configuration3 Phase Bridge
  • Maximum Continuous Collector Current200 A
  • Maximum Collector Emitter Voltage1200 V
  • Maximum Gate Emitter Voltage±20V
See similar products in IGBT Modules
  • HK$1.029
    個 (在毎卷:250)
BSS316NH6327XTSA1 N-Channel MOSFET, 1.4 A, 30 V OptiMOS 2, 3-Pin SOT-23 Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current1.4 A
  • Maximum Drain Source Voltage30 V
  • Maximum Drain Source Resistance280 mΩ
  • Maximum Gate Threshold Voltage2V
See similar products in MOSFETs
  • HK$5.992
    毎管:50 個
IRLZ24NPBF N-Channel MOSFET, 18 A, 55 V HEXFET, 3-Pin TO-220AB Infineon
  • Channel TypeN
  • Maximum Continuous Drain Current18 A
  • Maximum Drain Source Voltage55 V
  • Maximum Drain Source Resistance60 mΩ
  • Maximum Gate Threshold Voltage2V
See similar products in MOSFETs
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